Influence of tin doping on the structural and physical properties of indium-zinc oxides thin films deposited by pulsed laser deposition
Identifieur interne : 00F076 ( Main/Repository ); précédent : 00F075; suivant : 00F077Influence of tin doping on the structural and physical properties of indium-zinc oxides thin films deposited by pulsed laser deposition
Auteurs : RBID : Pascal:03-0022977Descripteurs français
- Pascal (Inist)
- Etude expérimentale, Couche mince, Croissance cristalline en phase vapeur, Dépôt laser pulsé, Zinc oxyde, Indium oxyde, Dopage, Addition étain, Propriété optique, Propriété électrique, Diffraction RX, Structure cristalline, Conductivité électrique, Densité porteur charge, Mobilité porteur charge, Microscopie électronique transmission, Haute résolution, Transmission optique, 8115F, 6855J, 7361L, 7866L, ZnkIn2Ok+3:Sn, In O Zn.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
- Carrier density, Carrier mobility, Crystal growth from vapors, Crystal structure, Doping, Electrical conductivity, Electrical properties, Experimental study, High-resolution methods, Indium oxides, Optical properties, Optical transmission, Pulsed laser deposition, Thin films, Tin additions, Transmission electron microscopy, XRD, Zinc oxides.
Abstract
A detailed investigation of the structural and opto-electrical properties of tin-doped indium-zinc oxide thin films prepared by pulsed laser deposition was carried out. The substitution of indium for tin in ZnkIn2Ok+3 compounds (k=2, 3 and 5) (which structure is a mixture of homologous phases with different k, but mostly composed of the polytype having the target composition) led to a conductivity enhancement, caused by an increase in carrier concentration at low doping levels, whereas for higher doping levels a decrease in conductivity and carrier concentration together with an amorphisation of the films was noted. The best electrical properties (σ=2500 S/cm) were obtained for the Zn2In1.9Sn0.1O5+δ doped films having a layered ZnkIn2Ok+3-type structure with essentially k=2. Independently of the composition an 85-90% average transmittance in the visible region was obtained. In contrast the band gap of the Sn-doped film slightly increased with tin ratio, in agreement with the Burstein-Moss theory.
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Naghavi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et de Chimie des Solides (UMR 6007), Université de Picardie Jules Verne</s1><s2>80039 Amines</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amines</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire d'Electrochimie et de Chimie Analytique (UMR 7575), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75231</s1><s2>Paris</s2><s3>FRA</s3><sZ>1 aut.</sZ></inist:fA14><country>France</country><placeName><region type="région">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author><author><name sortKey="Marcel, C" uniqKey="Marcel C">C. Marcel</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et de Chimie des Solides (UMR 6007), Université de Picardie Jules Verne</s1><s2>80039 Amines</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>80039 Amines</wicri:noRegion><wicri:noRegion>Université de Picardie Jules Verne</wicri:noRegion><wicri:noRegion>80039 Amines</wicri:noRegion></affiliation></author><author><name sortKey="Dupont, L" uniqKey="Dupont L">L. Dupont</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et de Chimie des Solides (UMR 6007), Université de Picardie Jules Verne</s1><s2>80039 Amines</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amines</settlement></placeName></affiliation></author><author><name sortKey="Guery, C" uniqKey="Guery C">C. Guery</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et de Chimie des Solides (UMR 6007), Université de Picardie Jules Verne</s1><s2>80039 Amines</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amines</settlement></placeName></affiliation></author><author><name sortKey="Maugy, C" uniqKey="Maugy C">C. Maugy</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et de Chimie des Solides (UMR 6007), Université de Picardie Jules Verne</s1><s2>80039 Amines</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amines</settlement></placeName></affiliation></author><author><name sortKey="Tarascon, J M" uniqKey="Tarascon J">J. M. Tarascon</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et de Chimie des Solides (UMR 6007), Université de Picardie Jules Verne</s1><s2>80039 Amines</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amines</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0022977</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 03-0022977 INIST</idno><idno type="RBID">Pascal:03-0022977</idno><idno type="wicri:Area/Main/Corpus">00E074</idno><idno type="wicri:Area/Main/Repository">00F076</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term><term>Carrier mobility</term><term>Crystal growth from vapors</term><term>Crystal structure</term><term>Doping</term><term>Electrical conductivity</term><term>Electrical properties</term><term>Experimental study</term><term>High-resolution methods</term><term>Indium oxides</term><term>Optical properties</term><term>Optical transmission</term><term>Pulsed laser deposition</term><term>Thin films</term><term>Tin additions</term><term>Transmission electron microscopy</term><term>XRD</term><term>Zinc oxides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Couche mince</term><term>Croissance cristalline en phase vapeur</term><term>Dépôt laser pulsé</term><term>Zinc oxyde</term><term>Indium oxyde</term><term>Dopage</term><term>Addition étain</term><term>Propriété optique</term><term>Propriété électrique</term><term>Diffraction RX</term><term>Structure cristalline</term><term>Conductivité électrique</term><term>Densité porteur charge</term><term>Mobilité porteur charge</term><term>Microscopie électronique transmission</term><term>Haute résolution</term><term>Transmission optique</term><term>8115F</term><term>6855J</term><term>7361L</term><term>7866L</term><term>ZnkIn2Ok+3:Sn</term><term>In O Zn</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A detailed investigation of the structural and opto-electrical properties of tin-doped indium-zinc oxide thin films prepared by pulsed laser deposition was carried out. The substitution of indium for tin in Zn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub> compounds (k=2, 3 and 5) (which structure is a mixture of homologous phases with different k, but mostly composed of the polytype having the target composition) led to a conductivity enhancement, caused by an increase in carrier concentration at low doping levels, whereas for higher doping levels a decrease in conductivity and carrier concentration together with an amorphisation of the films was noted. The best electrical properties (σ=2500 S/cm) were obtained for the Zn<sub>2</sub>In<sub>1.9</sub>Sn<sub>0.1</sub>O<sub>5+δ</sub> doped films having a layered Zn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub>-type structure with essentially k=2. Independently of the composition an 85-90% average transmittance in the visible region was obtained. In contrast the band gap of the Sn-doped film slightly increased with tin ratio, in agreement with the Burstein-Moss theory.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>419</s2></fA05><fA06><s2>1-2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Influence of tin doping on the structural and physical properties of indium-zinc oxides thin films deposited by pulsed laser deposition</s1></fA08><fA11 i1="01" i2="1"><s1>NAGHAVI (N.)</s1></fA11><fA11 i1="02" i2="1"><s1>MARCEL (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>DUPONT (L.)</s1></fA11><fA11 i1="04" i2="1"><s1>GUERY (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>MAUGY (C.)</s1></fA11><fA11 i1="06" i2="1"><s1>TARASCON (J. M.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Réactivité et de Chimie des Solides (UMR 6007), Université de Picardie Jules Verne</s1><s2>80039 Amines</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratoire d'Electrochimie et de Chimie Analytique (UMR 7575), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75231</s1><s2>Paris</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA14><fA20><s1>160-165</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000105223330240</s5></fA43><fA44><s0>0000</s0><s1>© 2003 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>03-0022977</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>A detailed investigation of the structural and opto-electrical properties of tin-doped indium-zinc oxide thin films prepared by pulsed laser deposition was carried out. The substitution of indium for tin in Zn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub> compounds (k=2, 3 and 5) (which structure is a mixture of homologous phases with different k, but mostly composed of the polytype having the target composition) led to a conductivity enhancement, caused by an increase in carrier concentration at low doping levels, whereas for higher doping levels a decrease in conductivity and carrier concentration together with an amorphisation of the films was noted. The best electrical properties (σ=2500 S/cm) were obtained for the Zn<sub>2</sub>In<sub>1.9</sub>Sn<sub>0.1</sub>O<sub>5+δ</sub> doped films having a layered Zn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub>-type structure with essentially k=2. Independently of the composition an 85-90% average transmittance in the visible region was obtained. In contrast the band gap of the Sn-doped film slightly increased with tin ratio, in agreement with the Burstein-Moss theory.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15F</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C61L</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H66L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Crystal growth from vapors</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Dépôt laser pulsé</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Pulsed laser deposition</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Zinc oxyde</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Zinc oxides</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium oxyde</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium oxides</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Dopage</s0><s5>10</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Doping</s0><s5>10</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Doping</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Addition étain</s0><s5>11</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Tin additions</s0><s5>11</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Propriété optique</s0><s5>12</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Optical properties</s0><s5>12</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>13</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Electrical properties</s0><s5>13</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>14</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>XRD</s0><s5>14</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>15</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Crystal structure</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>16</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>16</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>17</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Carrier density</s0><s5>17</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Mobilité porteur charge</s0><s5>18</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Carrier mobility</s0><s5>18</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>19</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>19</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Haute résolution</s0><s5>20</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>High-resolution methods</s0><s5>20</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Transmission optique</s0><s5>21</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Optical transmission</s0><s5>21</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Transmisión óptica</s0><s5>21</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>8115F</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>7361L</s0><s2>PAC</s2><s4>INC</s4><s5>58</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>7866L</s0><s2>PAC</s2><s4>INC</s4><s5>59</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>ZnkIn2Ok+3:Sn</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>In O Zn</s0><s4>INC</s4><s5>93</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>05</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>05</s5></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Oxyde</s0><s5>06</s5></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Oxides</s0><s5>06</s5></fC07><fC07 i1="03" i2="3" l="FRE"><s0>Métal transition composé</s0><s5>07</s5></fC07><fC07 i1="03" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>07</s5></fC07><fN21><s1>013</s1></fN21><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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